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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Role of H2 in Low Temperature Post-Oxidation...

Role of H₂ in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

639-642

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.639

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Online since:

January 2001

Authors:

Vito Raineri, Salvatore Lombardo, Paolo Musumeci, A.M. Maktari, Lucia Calcagno

Keywords:

Gate-Oxide, Interface States (or Traps), Oxidation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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