Paper Titles

Role of H₂ in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
p.639

Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
p.643

Observation of SiO₂/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy
p.647

Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
p.651

Indications for Nitrogen-Assisted Removal of Carbon from SiO₂-SiC Interface
p.655

Dissolution Mechanism of the Carbon Islands at the SiO₂/SiC Interface
p.659

Dependence of Wet Oxidation on the Defect Density in 3C-SiC
p.663

SiC Microwave Power Devices
p.669

1700 V SiC Schottky Diodes Scaled to 25 A
p.675

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Indications for Nitrogen-Assisted Removal of...

Indications for Nitrogen-Assisted Removal of Carbon from SiO₂-SiC Interface

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

655-658

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.655

Citation:

Cite this paper

Online since:

January 2001

Authors:

Philippe Jamet, Sima Dimitrijev, P. Tanner

Keywords:

Growth Rate, Nitrided Oxide (NO and N₂O), Oxidation, Secondary Ion Mass Spectroscopy (SIMS) Analysis, SiO₂-SiC Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: