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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Dependence of Wet Oxidation on the Defect Density...

Dependence of Wet Oxidation on the Defect Density in 3C-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

663-668

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.663

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Online since:

January 2001

Authors:

M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos

Keywords:

Antiphase Boundary (APB), Cubic Silicon Carbide (3C-SiC), Oxidation Rates, Oxide Roughness, Planar Defects, Wet Oxidation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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