Paper Titles

Indications for Nitrogen-Assisted Removal of Carbon from SiO₂-SiC Interface
p.655

Dissolution Mechanism of the Carbon Islands at the SiO₂/SiC Interface
p.659

Dependence of Wet Oxidation on the Defect Density in 3C-SiC
p.663

SiC Microwave Power Devices
p.669

1700 V SiC Schottky Diodes Scaled to 25 A
p.675

Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC
p.679

A High Performance JBS Rectifier - Design Considerations
p.683

Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
p.687

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
p.691

HomeMaterials Science ForumMaterials Science Forum Vols. 353-3561700 V SiC Schottky Diodes Scaled to 25 A

1700 V SiC Schottky Diodes Scaled to 25 A

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

675-678

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.675

Citation:

Cite this paper

Online since:

January 2001

Authors:

Dethard Peters, Karl Otto Dohnke, Christian Hecht, Dietrich Stephani

Keywords:

Freewheeling Diode, High Voltage (HV), Schottky Diode, Ultrafast Switching Device

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: