For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
p.643
Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy
p.647
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
p.651
Indications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC Interface
p.655
Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface
p.659
Dependence of Wet Oxidation on the Defect Density in 3C-SiC
p.663
SiC Microwave Power Devices
p.669
1700 V SiC Schottky Diodes Scaled to 25 A
p.675
Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC
p.679

Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2000 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

659-662

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.659

Citation:

Cite this paper

Online since:

January 2001

Authors:

Olga H. Krafcsik, V. Katalin Josepovits, Peter Deák

Keywords:

Carbon Islands, Dissolution Mechanism, SiO2-SiC Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.