Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

651-654

DOI:

10.4028/www.scientific.net/MSF.353-356.651

Citation:

S. Scharnholz et al., "Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC", Materials Science Forum, Vols. 353-356, pp. 651-654, 2001

Online since:

January 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.