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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Remote PECVD Oxide Utilized in U-MOS Structures...

Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

651-654

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.651

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Online since:

January 2001

Authors:

Sigo Scharnholz, O. Hellmund, J. Stein, B. Spangenberg, H. Kurz

Keywords:

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Oxide, Recessed Channel, Remote PECVD, SiO₂, Stress, Trench, U-MOS

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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