Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

643-646

DOI:

10.4028/www.scientific.net/MSF.353-356.643

Citation:

S. Suzuki et al., "Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties", Materials Science Forum, Vols. 353-356, pp. 643-646, 2001

Online since:

January 2001

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Price:

$35.00

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