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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Influence of Post-Oxidation Process on the MOS...

Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

643-646

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.643

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Online since:

January 2001

Authors:

Seiji Suzuki, W.J. Cho, Ryouji Kosugi, Junji Senzaki, Shinsuke Harada, Kenji Fukuda

Keywords:

Channel Mobility, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS Capacitor

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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