Paper Titles

Stability of Molybdenum Schottky Contact to Silicon Carbide
p.611

Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
p.615

Electrochemical Characterization of p-Type Hexagonal SiC
p.619

A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
p.623

Interface States of SiO₂/SiC on (11-20) and (0001) Si Faces
p.627

Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
p.631

Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
p.635

Role of H₂ in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
p.639

Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
p.643

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Interface States of SiO2/SiC on (11-20) and (0001)...

Interface States of SiO₂/SiC on (11-20) and (0001) Si Faces

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.627

Citation:

Cite this paper

Online since:

January 2001

Authors:

Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

(11-20) Face, Acceptor-Like Interface States, MOS, Shallow Traps

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: