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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Steam Annealing Effects on CV Characteristics of...

Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

635-638

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.635

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Online since:

January 2001

Authors:

Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Kunimasa Takahashi, Makoto Kitabatake

Keywords:

(11-20) Face, CV, Interface States (or Traps), MOS, Oxide-Trapped Charges, Re-Oxidation, Steam Annealing

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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