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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Interface Properties of MOS Structures Formed on...

Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

631-634

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.631

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Online since:

January 2001

Authors:

Kenji Fukuda, Seiji Suzuki, Junji Senzaki, W.J. Cho, Tomoyuki Tanaka, Kazuo Arai

Keywords:

C(000-1) Face, C-V Characteristics, Interface States (or Traps), Surface Morphology, TEM

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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