SiC Microwave Power Devices
p.669
p.669
1700 V SiC Schottky Diodes Scaled to 25 A
p.675
p.675
Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC
p.679
p.679
A High Performance JBS Rectifier - Design Considerations
p.683
p.683
Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
p.687
p.687
Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
p.691
p.691
Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC
p.695
p.695
A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
p.699
p.699
Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
p.703
p.703
Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
687-690
Citation:
Online since:
January 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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