Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

703-706

DOI:

10.4028/www.scientific.net/MSF.353-356.703

Citation:

C. Banc et al., "Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage", Materials Science Forum, Vols. 353-356, pp. 703-706, 2001

Online since:

January 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.