Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

703-706

Citation:

C. Banc et al., "Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage", Materials Science Forum, Vols. 353-356, pp. 703-706, 2001

Online since:

January 2001

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