Paper Titles

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC
p.695

A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
p.699

Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
p.703

Double Implanted Power MESFET Technology in 4H-SiC
p.707

Source Resistance Analysis of SiC-MESFET
p.711

Design and Implementation of RESURF MOSFETs in 4H-SiC
p.715

Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
p.719

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
p.723

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
p.727

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Source Resistance Analysis of SiC-MESFET

Source Resistance Analysis of SiC-MESFET

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

711-714

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.711

Citation:

Cite this paper

Online since:

January 2001

Authors:

Masao Arai, Makoto Ogata, Hirotake Honda, Hiroshi Sawazaki, A. Nakagawa, Masayoshi Kitamura

Keywords:

MESFET, Ohmic Contact, RTA, Sheet Resistance, Silicide, Source Resistance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: