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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Influence of the Buried p-Layer on the Blocking...

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

695-698

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.695

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Online since:

January 2001

Authors:

Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner, Rainer Kaltschmidt, Karl Otto Dohnke, Dietrich Stephani

Keywords:

Avalanche Breakdown, Buried Layers, Power Switching, Simulation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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