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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Double Implanted Power MESFET Technology in 4H-SiC

Double Implanted Power MESFET Technology in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

707-710

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.707

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Online since:

January 2001

Authors:

Alton B. Horsfall, S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights

Keywords:

Annealing, Implantation, MESFET, Roughness

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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