Double Implanted Power MESFET Technology in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

707-710

DOI:

10.4028/www.scientific.net/MSF.353-356.707

Citation:

A. B. Horsfall et al., "Double Implanted Power MESFET Technology in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 707-710, 2001

Online since:

January 2001

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Price:

$35.00

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