Paper Titles

A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
p.699

Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
p.703

Double Implanted Power MESFET Technology in 4H-SiC
p.707

Source Resistance Analysis of SiC-MESFET
p.711

Design and Implementation of RESURF MOSFETs in 4H-SiC
p.715

Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
p.719

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
p.723

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
p.727

Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
p.731

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Design and Implementation of RESURF MOSFETs in...

Design and Implementation of RESURF MOSFETs in 4H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

715-718

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.715

Citation:

Cite this paper

Online since:

January 2001

Authors:

S. Banerjee, K. Chatty, T. Paul Chow, Ronald J. Gutmann

Keywords:

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), RESURF, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: