A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

699-702

DOI:

10.4028/www.scientific.net/MSF.353-356.699

Citation:

J. Eriksson et al., "A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers", Materials Science Forum, Vols. 353-356, pp. 699-702, 2001

Online since:

January 2001

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$35.00

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