Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

691-694

DOI:

10.4028/www.scientific.net/MSF.353-356.691

Citation:

Q. Wahab et al., "Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing", Materials Science Forum, Vols. 353-356, pp. 691-694, 2001

Online since:

January 2001

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