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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Planar p-n Diodes Fabricated by MeV-Energy and...

Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

731-734

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.731

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Online since:

January 2001

Authors:

Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki

Keywords:

Activation, Aluminum (Al), Anneal, Diode Characteristics, Hall-Effect, Implantation Damage, Leakage Current, Rutherford Backscattering Spectrometry, Selective Implantation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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