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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Characteristics of Epitaxial and Implanted N-Base...

Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

739-742

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.739

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Online since:

January 2001

Authors:

Jeffery B. Fedison, T. Paul Chow

Keywords:

Bipolar Devices, GTO Thyristor, Ion Implantation, Power Device

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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