Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

739-742

DOI:

10.4028/www.scientific.net/MSF.353-356.739

Citation:

J. B. Fedison and T. P. Chow, "Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors", Materials Science Forum, Vols. 353-356, pp. 739-742, 2001

Online since:

January 2001

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