Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

757-762

Citation:

F. Nava et al., "Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 353-356, pp. 757-762, 2001

Online since:

January 2001

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.