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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Turn-off Performance of a 2.6 kV 4H-SiC...

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

743-746

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.743

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Online since:

January 2001

Authors:

Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Sei Hyung Ryu, Michael S. Shur

Keywords:

Carrier Lifetime, Gate Turn-Off Thyristor, Pulse Measurements

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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