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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356The Role of Threading Dislocations in the Physical...

The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

769-778

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.769

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Online since:

January 2001

Authors:

James S. Speck

Keywords:

Carrier Scattering, Deep Level, Extended Defects, Gallium Nitride (GaN), Leakage, Non-Radiative Recombination, Threading Dislocation, Trap

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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