Thin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle Detectors
p.763
p.763
The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
p.769
p.769
AlN Crystal Growth by Sublimation Technique
p.779
p.779
Investigation of the Structure of 2H-AlN Films on Si(001) Substrates
p.783
p.783
Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures
p.787
p.787
Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
p.791
p.791
From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
p.795
p.795
Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing
p.799
p.799
Characterization of GaAlN/GaN Superlattice Heterostructures
p.803
p.803
Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
787-790
Citation:
Online since:
January 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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