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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356SiC Junction Control, an Alternative to MOS...

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

723-726

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.723

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Online since:

January 2001

Authors:

Andrej Mihaila, F. Udrea, Gheorghe Brezeanu, R. Azar, G. Amaratunga

Keywords:

SiC JFET, SiC Trench MOSFET

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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