Volumes

Materials Science Forum
Vols. 373-376

Materials Science Forum
Vols. 369-372

Materials Science Forum
Vols. 366-368

Materials Science Forum
Vols. 363-365

Materials Science Forum
Vols. 360-362

Materials Science Forum
Vols. 357-359

Materials Science Forum
Vols. 353-356

Materials Science Forum
Vol. 352

Materials Science Forum
Vols. 350-351

Materials Science Forum
Vols. 347-349

Materials Science Forum
Vols. 343-346

Materials Science Forum
Vols. 338-342

Materials Science Forum
Vols. 331-337

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

Export:

ToC:

Table of Contents

Paper Title Page

EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC

Authors: Ivan V. Ilyin, E.N. Mokhov, P.G. Baranov

521

The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC

Authors: A. van Duijn-Arnold, R. Zondervan, P.G. Baranov, E.N. Mokhov, J. Schmidt

525

Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance

Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov, V.A. Khramtsov

529

Calculated Positron Annihilation Parameters for Defects in SiC

Authors: T.E.M. Staab, L.M. Torpo, M.J. Puska, Risto M. Nieminen

533

Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study

Authors: Atsuo Kawasuso, F. Redmann, Reinhard Krause-Rehberg, Peter Sperr, Thomas Frank, Michael Weidner, Gerhard Pensl, Hisayoshi Itoh

537

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Authors: Tsunenobu Kimoto, Hiroshi Yano, S. Tamura, Nao Miyamoto, Keiko Fujihira, Yuki Negoro, Hiroyuki Matsunami

543

Doping of Silicon Carbide by Ion Implantation

Authors: Bengt Gunnar Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan

549

Neutron Irradiation of 4H SiC

Authors: F.H.C. Carlsson, L. Storasta, Björn Magnusson, Peder Bergman, K. Sköld, Erik Janzén

555

Techniques for Depth Profiling of Dopants in 4H-SiC

Authors: John Österman, Anders Hallén, Srinivasan Anand, Margareta K. Linnarsson, H. Andersson, Boleslaw Formanek, D. Panknin, Wolfgang Skorupa

559

Growth of δ-Doped SiC Epitaxial Layers

Authors: S. Karlsson, C. Adås, Andrey O. Konstantinov, Margareta K. Linnarsson

563