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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Ru Schottky Barrier Contacts to n- and p-type 6H-SiC

Authors: M.E. Samiji, E. van Wyk, L. Wu, A.M. Venter, A.W.R. Leitch

607

Stability of Molybdenum Schottky Contact to Silicon Carbide

Authors: Kouichi Nishikawa, Masaaki Shimizu, Brian Foster, Hiroaki Iwakuro

611

Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties

Authors: Tomoaki Hatayama, Takashi Suezaki, Kazuaki Kawahito, Yukiharu Uraoka, Takashi Fuyuki

615

Electrochemical Characterization of p-Type Hexagonal SiC

Authors: M. Kayambaki, Konstantinos Zekentes, Katerina Tsagaraki, Etienne Pernot, Rositza Yakimova

619

A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices

Authors: J. Neil Merrett, David C. Sheridan, John R. Williams, Chin Che Tin, J.D. Cressler

623

Interface States of SiO₂/SiC on (11-20) and (0001) Si Faces

Authors: Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami

627

Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face

Authors: Kenji Fukuda, Seiji Suzuki, Junji Senzaki, W.J. Cho, Tomoyuki Tanaka, Kazuo Arai

631

Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC

Authors: Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Kunimasa Takahashi, Makoto Kitabatake

635

Role of H₂ in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC

Authors: Vito Raineri, Salvatore Lombardo, Paolo Musumeci, A.M. Maktari, Lucia Calcagno

639

Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties

Authors: Seiji Suzuki, W.J. Cho, Ryouji Kosugi, Junji Senzaki, Shinsuke Harada, Kenji Fukuda

643