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Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

ToC:

Table of Contents

Paper Title Page

Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
Authors: Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki
731
Silicon Carbide Zener Diodes
Authors: Konstantin Vassilevski, Konstantinos Zekentes, Elena V. Bogdanova, M. Lagadas, A.V. Zorenko
735
Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
Authors: Jeffery B. Fedison, T. Paul Chow
739
Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor
Authors: Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Sei Hyung Ryu, Michael S. Shur
743
SiC Based Gas Sensors and their Applications
Authors: Susan Savage, Henrik Svenningstorp, Lars Unéus, A. Kroutchinine, Peter Tobias, Lars-G. Ekedahl, Ingemar Lundström, Chris I. Harris, Anita Lloyd Spetz
747
High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications
Authors: S. Zappe, J. Franklin, E. Obermeier, M. Eickhoff, H. Möller, G. Krötz, C. Rougeot, O. Lefort, J. Stoemenos
753
Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Authors: Filippo Nava, P. Vanni, G. Verzellesi, Antonio Castaldini, Anna Cavallini, L. Polenta, Roberta Nipoti, C. Donolato
757
Thin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle Detectors
Authors: Alexander A. Lebedev, Nikita B. Strokan, M. Kajita, D.V. Davydov, Vitalii V. Kozlovski
763
The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
Authors: James S. Speck
769
AlN Crystal Growth by Sublimation Technique
Authors: S.Yu. Karpov, A.V. Kulik, M.S. Ramm, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, Yuri Makarov
779

Showing 181 to 190 of 198 Paper Titles

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