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Vols. 353-356

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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Paper Title Page

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Authors: Qamar-ul Wahab, E.B. Macák, Jie Zhang, Lynnette D. Madsen, Erik Janzén

691

Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Authors: Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner, Rainer Kaltschmidt, Karl Otto Dohnke, Dietrich Stephani

695

A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers

Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Rolf Jonsson, Qamar-ul Wahab, Staffan Rudner

699

Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Authors: C. Banc, A.S. Royet, Thierry Ouisse, Edwige Bano, Olivier Noblanc, Christian Brylinski

703

Double Implanted Power MESFET Technology in 4H-SiC

Authors: Alton B. Horsfall, S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights

707

Source Resistance Analysis of SiC-MESFET

Authors: Masao Arai, Makoto Ogata, Hirotake Honda, Hiroshi Sawazaki, A. Nakagawa, Masayoshi Kitamura

711

Design and Implementation of RESURF MOSFETs in 4H-SiC

Authors: S. Banerjee, K. Chatty, T. Paul Chow, Ronald J. Gutmann

715

Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications

Authors: Kazuhiro Adachi, C. Mark Johnson, Hiromichi Ohashi, Takashi Shinohe, Kozo Kinoshita, Kazuo Arai

719

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Authors: Andrej Mihaila, F. Udrea, Gheorghe Brezeanu, R. Azar, G. Amaratunga

723

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

Authors: H. Lendenmann, Fanny Dahlquist, N. Johansson, R. Söderholm, Per Åke Nilsson, Peder Bergman, P. Skytt

727

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