Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Paper Title Page

Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor

Authors: S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights, Paul G. Coleman, C.P. Burrows, A.J. Pidduck

567

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Authors: Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Erwan Morvan, Philippe Godignon, Wolfgang Skorupa, Jean-Pierre Chante

571

Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions

Authors: Takeshi Ohshima, Hisayoshi Itoh, Masahito Yoshikawa

575

High Dose Implantation in 6H-SiC

Authors: V. Heera, Wolfgang Skorupa, J. Stoemenos, Béla Pécz

579

Precipitate Formation in Heavily Al-Doped 4H-SiC Layers

Authors: Margareta K. Linnarsson, P.O.Å. Persson, H. Bleichner, Martin S. Janson, Uwe Zimmermann, H. Andersson, S. Karlsson, Rositza Yakimova, L. Hultman, Bengt Gunnar Svensson

583

Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC

Authors: D. Panknin, T. Gebel, Wolfgang Skorupa

587

Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers

Authors: C. Serre, D. Panknin, A. Pérez-Rodríguez, A. Romano-Rodríguez, J.R. Morante, Reinhard Kögler, Wolfgang Skorupa, Jaume Esteve, M.C. Acero

591

Channeling Measurements of Ion Implantation Damage in 4H-SiC

Authors: Andrej Yu. Kuznetsov, Martin S. Janson, Anders Hallén, Bengt Gunnar Svensson, C. Jagadish, H. Grünleitner, Gerhard Pensl

595

The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

Authors: Giorgio Lulli, E. Albertazzi, Roberta Nipoti, Marco Bianconi, A. Carnera