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Vols. 353-356

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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

Authors: V.S. Lysenko, I.P. Osiyuk, T.E. Rudenko, I.P. Tyagulski, E.Ö. Sveinbjörnsson, H.Ö. Ólafsson

479

Intrinsic Mobility of Conduction Electrons in 4H-SiC

Authors: Julien Pernot, Sylvie Contreras, E. Neyret, Lea Di Cioccio, W. Zawadzki, Jean-Louis Robert

483

A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes

Authors: A. Martinez, H.-E. Nilsson, Ulf Lindefelt

487

Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect

Authors: Vytautas Grivickas, M. Stölzer, Enn Velmre, Andres Udal, Paulius Grivickas, Mikael Syväjärvi, Rositza Yakimova, V. Bikbajevas

491

Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements

Authors: Hideharu Matsuura, Yasuichi Masuda, Yi Chen, Shigehiro Nishino

495

Intrinsic Defects in Silicon Carbide Polytypes

Authors: Nguyen Tien Son, P.N. Hai, Erik Janzén

499

Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance

Authors: Th. Lingner, Siegmund Greulich-Weber, Johann Martin Spaeth

505

Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold

Authors: Hans Jürgen von Bardeleben, J.L. Cantin, P.G. Baranov, E.N. Mokhov

509

EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

Authors: Hans Jürgen von Bardeleben, J.L. Cantin

513

EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC

Authors: V.Ya. Bratus, I.N. Makeeva, S.M. Okulov, T.L. Petrenko, T.T. Petrenko, Hans Jürgen von Bardeleben

517