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Vols. 353-356

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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Paper Title Page

Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC

Authors: Roland Weingärtner, Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker

397

Low Temperature Photoluminescence Processes of ¹³C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method

Authors: Horst Sadowski, Norbert Schulze, Thomas Frank, Gerhard Pensl, Michael Laube, Reinhard Helbig

401

Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy

Authors: Ivan G. Ivanov, T. Egilsson, Jie Zhang, Alexsandre Ellison, Erik Janzén

405

Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study

Authors: Andreas Fissel, W. Richter

409

Prediction of Optical Properties of Si and Ge Dots in SiC

Authors: Hans-Christian Weissker, J. Furthmüller, Friedhelm Bechstedt

413

Investigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric Function

Authors: Morten Kildemo, Ola Hunderi

417

Theory of Hydrogen in Silicon Carbide

Authors: Peter Deák, Adam Gali, B. Aradi

421

Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC

Authors: Martin S. Janson, Anders Hallén, Margareta K. Linnarsson, Nils Nordell, S. Karlsson, Bengt Gunnar Svensson

427

Proton Irradiation Induced Defects in 4H-SiC

Authors: L. Storasta, F.H.C. Carlsson, S.G. Sridhara, Boleslaw Formanek, Peder Bergman, Anders Hallén, Erik Janzén

431

Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs

Authors: E. Rauls, Z. Hajnal, Adam Gali, Peter Deák, Thomas Frauenheim

435