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Materials Science Forum
Vols. 353-356

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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

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Paper Title Page

Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy

Authors: Robert P. Devaty, Song Bai, Wolfgang J. Choyke, H. McD. Hobgood, David J. Larkin

357

Zeeman Effect of D₁ Bound Exciton in 4H-SiC

Authors: C.Q. Chen, Reinhard Helbig, Rainer Winkler, A. Wysmołek, M. Potemski

361

As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC

Authors: Björn Magnusson, Alexsandre Ellison, F.H.C. Carlsson, Nguyen Tien Son, Erik Janzén

365

Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons

Authors: Hans Heissenstein, Reinhard Helbig

369

Presence of Hydrogen in SiC

Authors: Anne Henry, Björn Magnusson, Margareta K. Linnarsson, Alexsandre Ellison, Mikael Syväjärvi, Rositza Yakimova, Erik Janzén

373

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Authors: S.G. Sridhara, F.H.C. Carlsson, Peder Bergman, Anne Henry, Erik Janzén

377

Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy

Authors: John W. Steeds, F. Carosella, A.G. Evans, M.M. Ismail, L. R. Danks, W. Voegeli

381

Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC

Authors: Julien Pernot, Jean Marie Bluet, Jean Camassel, Lea Di Cioccio

385

Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy

Authors: Augustinas Galeckas, Jan Linnros, Bo Breitholtz, H. Bleichner

389

Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy

Authors: L. Masarotto, Jean Marie Bluet, M. Berenguer, P. Girard, Gérard Guillot

393

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