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Vols. 353-356

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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Observation of SiO₂/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy

Authors: Kenji Fukuda, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Tomoyuki Tanaka, Kazuo Arai

647

Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

Authors: Sigo Scharnholz, O. Hellmund, J. Stein, B. Spangenberg, H. Kurz

651

Indications for Nitrogen-Assisted Removal of Carbon from SiO₂-SiC Interface

Authors: Philippe Jamet, Sima Dimitrijev, P. Tanner

655

Dissolution Mechanism of the Carbon Islands at the SiO₂/SiC Interface

Authors: Olga H. Krafcsik, V. Katalin Josepovits, Peter Deák

659

Dependence of Wet Oxidation on the Defect Density in 3C-SiC

Authors: M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos

663

SiC Microwave Power Devices

Authors: Erwan Morvan, Olivier Noblanc, Christian Dua, Christian Brylinski

669

1700 V SiC Schottky Diodes Scaled to 25 A

Authors: Dethard Peters, Karl Otto Dohnke, Christian Hecht, Dietrich Stephani

675

Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC

Authors: Michael Treu, Roland Rupp, H. Kapels, Wolfgang Bartsch

679

A High Performance JBS Rectifier - Design Considerations

Authors: Fanny Dahlquist, H. Lendenmann, Mikael Östling

683

Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination

Authors: David C. Sheridan, J. Neil Merrett, J.D. Cressler, Stephen E. Saddow, John R. Williams, C. Ellis, G. Niu

687