Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

Export:

MARCXML

ToC:

Table of Contents

Paper Title Page

Authors: H. J. Rost, J. Dolle, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber

Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow

Authors: Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker

Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals

Authors: D.S. Karpov, O.V. Bord, S.Yu. Karpov, A.I. Zhmakin, M.S. Ramm, Yuri Makarov

Some Aspects of Sublimation Growth of SiC Ingots

Authors: S.F. Avramenko, V.S. Kiselev, M. Valakh, V.A. Yukhimchuk

Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

Authors: Norbert Schulze, Jürgen Gajowski, Kurt Semmelroth, Michael Laube, Gerhard Pensl

Study of Boron Incorporation During PVT Growth of p-type SiC Crystals

Authors: Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport

Authors: Sergey A. Reshanov, V.P. Rastegaev, Yuri M. Tairov

Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization

Authors: M.V. Bogdanov, O.V. Bord, A.O. Galyukov, S.Yu. Karpov, A.V. Kulik, S.K. Kochuguev, A.E. Komissarov, D.Kh. Ofengeim, A.M. Serkov, A.V. Tsiryulnikov, I.A. Zhmakin, M.S. Ramm, A.I. Zhmakin, Yuri Makarov

Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method

Authors: Alexander Pisch, Elisabeth Blanquet, Michel Pons, Claude Bernard, Jean Marc Dedulle, Roland Madar

Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann