Paper Titles

Bulk Studies of Defects in Semiconductors
p.30

Thermal Vacancy Formation and Diffusion in Nanocrystalline Materials
p.35

Positron Annihilation in Diamond
p.40

Investigation of Reactor Steels
p.47

Defect Studies in Semiconductors
p.52

Defect Physics Investigations Using Positron and Ion Beams
p.56

Open-Volume Defects in Plastically Deformed Semiconductors
p.61

Native and Irradiation-Induced Defects in SiO₂ Structures Studied by Positron Annihilation Techniques
p.64

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations
p.67

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Defect Studies in Semiconductors

Defect Studies in Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

52-55

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.52

Citation:

Cite this paper

Online since:

April 2001

Authors:

Masanori Fujinami, Tsuguo Sawada, Takashi Akahane

Keywords:

Anneal, Coincidence Doppler Broadening, Defect, Ion Implantation, Positron, Silicon, Vacancy, Vacancy Impurity Complexes

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: