Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations

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Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

67-69

DOI:

10.4028/www.scientific.net/MSF.363-365.67

Citation:

Z. Tang et al., "Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations", Materials Science Forum, Vols. 363-365, pp. 67-69, 2001

Online since:

April 2001

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