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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Identification of Vacancy-Oxygen Complexes in Si...

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

67-69

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.67

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Online since:

April 2001

Authors:

Z. Tang, T. Nonaka, Yasuyoshi Nagai, Mitsuru Hasegawa

Keywords:

Coincidence Doppler Broadening, Full-Potential Linearized-Augmented-Plane-Wave Calculation, Positron Annihilation, Silicon, Vacancy Oxygen Complex

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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