Paper Titles

Positron Annihilation in Diamond
p.40

Investigation of Reactor Steels
p.47

Defect Studies in Semiconductors
p.52

Defect Physics Investigations Using Positron and Ion Beams
p.56

Open-Volume Defects in Plastically Deformed Semiconductors
p.61

Native and Irradiation-Induced Defects in SiO₂ Structures Studied by Positron Annihilation Techniques
p.64

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations
p.67

Identification of Vacancies on each Sublattice of SiC by Coincident Doppler Broadening of the Positron Annihilation Photons after Electron Irradiation
p.70

Vacancy-Type Defects in Proton-Irradiated InAs
p.73

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Open-Volume Defects in Plastically Deformed...

Open-Volume Defects in Plastically Deformed Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

61-63

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.61

Citation:

Cite this paper

Online since:

April 2001

Authors:

H.S. Leipner, C.G. Hübner, T.E.M. Staab, Reinhard Krause-Rehberg

Keywords:

Dislocation, GaAs, Jogs, Metastability, Plastic Deformation, Silicon, Void

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: