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Thermal Vacancy Formation and Diffusion in Nanocrystalline Materials
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Defect Physics Investigations Using Positron and Ion Beams
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Open-Volume Defects in Plastically Deformed Semiconductors
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Native and Irradiation-Induced Defects in SiO₂ Structures Studied by Positron Annihilation Techniques
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Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations
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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Defect Physics Investigations Using Positron and...

Defect Physics Investigations Using Positron and Ion Beams

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

56-60

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.56

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Online since:

April 2001

Authors:

P.J. Simpson, Stanislaw Szpala, A.P. Knights

Keywords:

Electric Field, Garboldisham, Ion Implantation, Silicon, Vacancy

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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