Paper Titles

Deep Levels in GaAs Mesfets
p.1439

Defects in MOS Technologies
p.1445

Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces
p.1451

Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide
p.1457

Investigation of Trapping Properities in Simox Films by Photo-Induced Current Transient Spectroscopy
p.1463

Coherent Potential Approximation Calcutations of the Electronic Structure of Amorphous Silicon
p.1469

Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H
p.1475

Influence of the Defect Density of Amorphous Silicon at the Substrate Interface on the Schottky Barrier Characteristics
p.1481

Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers
p.1487

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Influence of the Field Induced Doping Effect on...

Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1475-1480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1475

Citation:

Cite this paper

Online since:

January 1989

Authors:

D.L. Huber, G. Zentai

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: