Paper Titles

Deep Levels in GaAs Mesfets
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Defects in MOS Technologies
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Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces
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Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide
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Investigation of Trapping Properities in Simox Films by Photo-Induced Current Transient Spectroscopy
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Coherent Potential Approximation Calcutations of the Electronic Structure of Amorphous Silicon
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Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H
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Influence of the Defect Density of Amorphous Silicon at the Substrate Interface on the Schottky Barrier Characteristics
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Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Microinhomogeneities Characterized by Photocurrent...

Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1487-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1487

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Online since:

January 1989

Authors:

M. Füstöss-Wegner, L. Pogány, Margit Koós, László S. Tóth, G. Zentai

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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