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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Highly Uniform Epitaxial SiC-Layers Grown in a...

Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

187-190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.187

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Online since:

April 2002

Authors:

Adolf Schöner, Andrey O. Konstantinov, S. Karlsson, R. Berge

Keywords:

Capacitance-Voltage Measurement, Chemical Vapor Deposition (CVD), Doping Uniformity, Epitaxial Growth with Substrate Rotation, Thickness Uniformity, Wafer Mapping

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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