Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

187-190

DOI:

10.4028/www.scientific.net/MSF.389-393.187

Citation:

A. Schöner et al., "Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation", Materials Science Forum, Vols. 389-393, pp. 187-190, 2002

Online since:

April 2002

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$35.00

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