Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

199-202

DOI:

10.4028/www.scientific.net/MSF.389-393.199

Citation:

T. Miyanagi and S. Nishino, "Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System", Materials Science Forum, Vols. 389-393, pp. 199-202, 2002

Online since:

April 2002

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$35.00

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