Paper Titles

Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
p.183

Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
p.187

Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
p.191

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
p.195

Hot-Wall CVD Growth of 4H-SiC Using Si₂Cl₆+C₃H₈+H₂ System
p.199

Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
p.203

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
p.207

Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
p.211

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
p.215

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2...

Hot-Wall CVD Growth of 4H-SiC Using Si₂Cl₆+C₃H₈+H₂ System

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

199-202

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.199

Citation:

Cite this paper

Online since:

April 2002

Authors:

Toshiyuki Miyanagi, Shigehiro Nishino

Keywords:

Cold-Wall CVD, Hot-Wall CVD, Scratch-Like Defects, Shallow Round Pits, Si₂Cl₆, Triangular Defects, Triangular Pits

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: