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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Aluminum Incorporation into 4H-SiC Layers during...

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

207-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.207

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Online since:

April 2002

Authors:

Günter Wagner, W. Leitenberger, K. Irmscher, Frank Schmid, Michael Laube, Gerhard Pensl

Keywords:

Aluminum (Al), Epitaxial Growth, Hot-Wall CVD, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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