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Identification and Annealing of Common Intrinsic Defect Centers
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Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation
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Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?
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A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
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Theoretical Study of Antisite Aggregation in α-SiC
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EPR Studies of Interface Defects in n-Type 6H-SiC/SiO₂ Using Porous SiC
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Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
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Phosphorus-Related Shallow and Deep Defects in 6H-SiC
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EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Theoretical Study of Antisite Aggregation in α-SiC

Theoretical Study of Antisite Aggregation in α-SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

491-494

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.491

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Online since:

September 2003

Authors:

E. Rauls, Adam Gali, Peter Deák, Thomas Frauenheim

Keywords:

Aggregation, Antisites, Intrinsic Defect, Migration, Theory

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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