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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Nitrogen-Vacancy Complexes in SiC – Final...

Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

481-486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.481

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Online since:

September 2003

Authors:

Uwe Gerstmann, E. Rauls, Thomas Frauenheim, Harald Overhof

Keywords:

Annealing, Diamond, Nitrogen, Passivation, Silicon Carbide (SiC), Vacancy

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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