Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC

Ekaterina N. Kalabukhova; W.C. Mitchel; S.N. Lukin

doi:10.4028/www.scientific.net/MSF.433-436.499

Paper Titles

Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?
p.481

A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
p.487

Theoretical Study of Antisite Aggregation in α-SiC
p.491

EPR Studies of Interface Defects in n-Type 6H-SiC/SiO₂ Using Porous SiC
p.495

Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
p.499

EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
p.507

Calculation of Hyperfine Constants of Defects in 4H-SiC
p.511

A Simple Model of 3d Impurities in Cubic Silicon Carbide
p.515

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Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

499-502

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.499

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Online since:

September 2003

Authors:

Ekaterina N. Kalabukhova, W.C. Mitchel, S.N. Lukin

Keywords:

Donors, Electronic Structure, Energy Characteristics, EPR, Hall

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