EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V

Hans Jürgen von Bardeleben; J.L. Cantin; Sergey A. Reshanov; V.P. Rastegaev

doi:10.4028/www.scientific.net/MSF.433-436.507

Paper Titles

Theoretical Study of Antisite Aggregation in α-SiC
p.491

EPR Studies of Interface Defects in n-Type 6H-SiC/SiO₂ Using Porous SiC
p.495

Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
p.499

EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
p.507

Calculation of Hyperfine Constants of Defects in 4H-SiC
p.511

A Simple Model of 3d Impurities in Cubic Silicon Carbide
p.515

Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
p.519

A Shallow Acceptor Complex in 4H-SiC: Al_SiN_CAl_Si
p.523

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EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

507-510

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.507

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Online since:

September 2003

Authors:

Hans Jürgen von Bardeleben, J.L. Cantin, Sergey A. Reshanov, V.P. Rastegaev

Keywords:

Defect, EPR, Semi-Insulating SiC

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