Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide

Hisaomi Iwata; Ulf Lindefelt; Sven Öberg; Patrick R. Briddon

doi:10.4028/www.scientific.net/MSF.433-436.519

Paper Titles

EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
p.507

Calculation of Hyperfine Constants of Defects in 4H-SiC
p.511

A Simple Model of 3d Impurities in Cubic Silicon Carbide
p.515

Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
p.519

A Shallow Acceptor Complex in 4H-SiC: Al_SiN_CAl_Si
p.523

Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond
p.527

Electronic Properties of Stacking Faults in 15R-SiC
p.531

A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
p.535

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Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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519-522

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.519

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September 2003

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Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

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Effective Mass, First-Principle Calculations, Polytype Inclusions, Stacking Fault

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