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Paper Titles
Calculation of Hyperfine Constants of Defects in 4H-SiC
p.511
A Simple Model of 3d Impurities in Cubic Silicon Carbide
p.515
Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide
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A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
p.523
Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond
p.527
Electronic Properties of Stacking Faults in 15R-SiC
p.531
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
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Angle-Resolved Studies of SiO2/SiC Samples
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Positron Annihilation Studies of Defects at the SiO2/SiC Interface
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Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond

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Silicon Carbide and Related Materials - 2002 View Preview

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

527-530

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.527

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Online since:

September 2003

Authors:

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

Keywords:

3C-SiC, First-Principle Calculations, Stacking Fault, Twin Boundaries

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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